The rapid advancements in fabrication techniques have significantly accelerated the resurgence of silicon-based Photonic Integrated Circuits (PICs). Among the most successful platforms for PIC development are Silicon-On-Insulator (SOI) and Silicon Nitride (SiN), both highly favored for their compatibility with CMOS processes. Typically, PICs are fabricated on a wafer using a planar process that incorporates a single core material with a predefined thickness. However, this traditional single-material approach falls short in providing the comprehensive functionalities required for fully integrated PICs.
To address this limitation, hybrid photonic devices that integrate thin-film SiN onto the SOI platform have been developed. This Si/SiN hybrid platform allows for the integration of both material systems on a single chip, leveraging the unique advantages of each. Our in-house fabrication process specializes in developing such Si/SiN hybrid photonic devices, offering rapid prototyping.

For further query-related fabrication and processing services, kindly contact our CTO Arnab Goswami [Email id:] cto-cppics[at]ee.iitm.ac.in